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CGHV59070

Wolfspeed CGHV59070 70W 4500-5900MHz GaN HEMT display
Peak Output Power 70W
Application Radar
Power Gain 12 dB
Operating Voltage 50 V
Frequency 4.5 - 5.9 GHz
Package Type Flange/Pill
Drain Efficiency 50 %
Internal Matching Yes
Technology GaN on SiC

70-W, 4500 to 5900-MHz, internally matched GaN HEMT for C-Band Radar Systems

SKU: CGHV59070

Wolfspeed’s CGHV59070 is an internally matched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.

Documents

Data Sheets

Document Name Date Updated Download
CGHV59070
Version: 2.1
Jan 2, 2020

Line Card

Document Name Date Updated Download
RF Line Card Mar 11, 2020

RF Application Notes

Document Name Date Updated Download
Load Pull Validation of Large Signal Cree GaN Field Effect Transistor (FET) Model
Version: A
Jan 21, 2016

RF Product Ecology

Document Name Date Updated Download
440170 GaN HEMT REACh Declaration
CGHV59070P
Jul 25, 2019
440170 GaN HEMT RoHS Declaration
Version: RS4168072018
CGHV59070P
Nov 9, 2018
440224 GaN HEMT REACh Declaration
CG2H30070F, CGHV59070F
Jul 25, 2019
440224 GaN HEMT RoHS Declaration
Version: RS4156012019
CG2H30070F, CGHV59070F
Mar 1, 2019

RF Videos

Document Name Date Updated Download
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture Nov 2, 2018
Webinar: Design of an 800W GaN Power Amplifier Stage for Pulsed L Band Applications Feb 17, 2017

S-parameters

Document Name Date Updated Download
CGHV59070F Jun 2, 2017

Sales Terms

Document Name Date Updated Download
Sales Terms and Conditions
Version: M
Jul 19, 2019

Technical Papers & Articles

Document Name Date Updated Download
Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies
Version: Design
by Donald A. Gajewski, Scott Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, and John Palmour.

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Oct 12, 2018
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