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Peak Output Power 70W
Application Radar
Power Gain 12 dB
Operating Voltage 50 V
Frequency 4.5 - 5.9 GHz
Package Type Flange/Pill
Drain Efficiency 50 %
Internal Matching Yes
Technology GaN on SiC

70-W, 4500 to 5900-MHz, internally matched GaN HEMT for C-Band Radar Systems

SKU: CGHV59070

Wolfspeed’s CGHV59070 is an internally matched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.



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