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CGHV59070

CGHV59070

70-W; 4500 to 5900-MHz; internally matched GaN HEMT for C-Band Radar Systems
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Wolfspeed’s CGHV59070 is an internally matched; gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070; operating from a 50 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV59070P
Yes
GaN on SiC
4.5 GHz
5.9 GHz
70 W
12 dB
50%
50 V
Packaged Discrete Transistor
Pill
CGHV59070F-AMP
Yes
GaN on SiC
4.8 GHz
5.9 GHz
70 W
12 dB
NA
50 V
Evaluation Board
Flange
CGHV59070F
Yes
GaN on SiC
4.5 GHz
5.9 GHz
70 W
12 dB
50%
50 V
Packaged Discrete Transistor
Flange
Features
  • 4.4 – 5.9 GHz Operation
  • 90 W POUT typical at 50 V
  • 14 dB Power Gain
  • 55 % Drain Efficiency
  • Internally Matched
Applications
  • Marine Radar
  • Weather Monitoring
  • Air Traffic Control
  • Maritime Vessel Traffic Control
  • Port Security
  • Troposcatter Communications
  • Beyond Line of Sight – BLOS
  • Satellite Communications
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Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

RF
|
Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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