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Peak Output Power 75W
Application General-Purpose Broadband, 50 V
Typical Power Added Efficiency PAE 65 % @ 4GHz 60 % @ 6GHz
Typical Power (PSAT) 75 W
Operating Voltage 50 V
Breakdown Voltage High
Frequency DC - 6.0 GHz
Package Type Die
Small Signal Gain 18 dB @ 4 GHz 17 dB @ 6 GHz
Technology GaN on SiC

WARNING: Cancer and Reproductive Harm -

75-W, 6.0-GHz, GaN HEMT Die

SKU: CGHV60075D5

Wolfspeed’s CGHV60075D5 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.



  • Up to 6-GHz operation



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