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CGHV60075D5

CGHV60075D5

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Warning:

Cancer & Reproductive Harm – www.p65warnings.ca.gov

75-W; 6.0-GHz; GaN HEMT Die

Wolfspeed’s CGHV60075D5 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated-electron-drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

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Data Sheet
Recommended For New Design?
Technology
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV60075D5-GP4
Yes
GaN on SiC
6 GHz
75 W
>7 dB
65%
50 V
Discrete Bare Die
Die
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV60075D5-GP4
Yes
GaN on SiC
6 GHz
75 W
>7 dB
65%
50 V
Discrete Bare Die
Die
Features
  • 65% Typical Power Added Efficiency at 4 GHz
  • 60% Typical Power Added Efficiency at 6 GHz
  • 75 W Typical PSAT
  • 50 V Operation
  • High Breakdown Voltage
  • Up to 6 GHz Operation
Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test Instrumentation
  • Class A; AB; Linear amplifiers suitable for OFDM; W-CDMA; EDGE; CDMA waveforms
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Document Type
Document Name
Application Notes
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Ecology
CG2H80015D – CG2H80030D – CG2H80060D – CG2H80120D – CGH60008D – CGH60015D – CGH60030D – CGH60060D – CGH60120D – CGH80030D – CGHV1J006D – CGHV1J025D – CGHV1J070D – CGHV27320T1AD – CGHV30500D3 – CGHV40320D – CGHV40320D5 – CGHV40320T1AD – CGHV60015T1D – CGHV60018D5 – CGHV60030D5 – CGHV60030T1D – CGHV60035D5 – CGHV60040D – CGHV60060D5 – CGHV60075D – CGHV60075D5 – CGHV60080D5 – CGHV60080T1AD – CGHV60100D – CGHV60120D5 – CGHV60120T1AD – CGHV60120T1D – CGHV60125T1AD – CGHV60160D5 – CGHV60160T1AD – CGHV60170D – CGHV60170D5 – CGHV60180D5 – CGHV60180D7 – CGHV60240D5 – CGHV60240D7 – CGHV60240T1AD – CGHV60240T1D – CGHV60250D5
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Ecology
CG2H80015D – CG2H80030D – CG2H80060D – CG2H80120D – CGH60008D – CGH60015D – CGH60030D – CGH60060D – CGH60120D – CGH80030D – CGHV1J006D – CGHV1J025D – CGHV1J070D – CGHV27320T1AD – CGHV30500D3 – CGHV40320D – CGHV40320D5 – CGHV40320T1AD – CGHV60015T1D – CGHV60018D5 – CGHV60030D5 – CGHV60030T1D – CGHV60035D5 – CGHV60040D – CGHV60060D5 – CGHV60075D – CGHV60075D5 – CGHV60080D5 – CGHV60080T1AD – CGHV60100D – CGHV60120D5 – CGHV60120T1AD – CGHV60120T1D – CGHV60125T1AD – CGHV60160D5 – CGHV60160T1AD – CGHV60170D – CGHV60170D5 – CGHV60180D5 – CGHV60180D7 – CGHV60240D5 – CGHV60240D7 – CGHV60240T1AD – CGHV60240T1D – CGHV60250D5
Product Catalog
Sales Terms
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GaN on SiC

Thermal Considerations for X-Band MMICs Under CW Operation

Join Kasyap Patel of Wolfspeed for a live webinar on September 20th as we discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
Register Now 
 Webinars
RF PA 101_amplifier classes image
GaN on SiC

RF Power Amplification 101: Amplifier Classes

The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
Continue Reading 
 Technical Articles
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GaN on SiC

Countering RCIEDs with GaN’s Bandwidth & Power Density Advantages

Counter-RCIED devices used by the military and law enforcement rely on jamming wireless trigger signals. This article will discuss how GaN’s high-temperature reliability and power density capability enables jammer equipment to meet system SWaP-C requirements.
Continue Reading 
 Blog
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