Features
- 7.9 – 8.4 GHz Operation
- 80 W POUT typical
- >13 dB Power Gain
- 33 % Typical Linear PAE
- 50 Ohm Internally Matched
- <0.1 dB Power Droop
CGHV96050F1
50-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output Matched GaN HEMT
Wolfspeed’s CGHV96050F1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
Products
CGHV96050F1
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CGHV96050F1
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV96050F1 | Yes | GaN on SiC | 7.9 GHz | 8.4 GHz | 50 W | >13 dB | 33% | 40 V | Packaged Discrete Transistor | Flange | ||||
CGHV96050F1-AMP | Yes | GaN on SiC | 7.9 GHz | 8.4 GHz | 50 W | >13 dB | 33% | 40 V | Evaluation Board | Flange |
Applications
- Satellite Communication
- Terrestrial Broadband
Documents, Tools & Support
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Documents
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Document Type | Document Name |
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| Application Notes | |
| Application Notes | |
| Application Notes | |
| Data Sheets | |
| Technical Papers & Articles | by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
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| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Donald A. Gajewski – Wolfspeed
Randall D. Lewis – Northrop Grumman Corp. Benjamin M. Decker – Northrop Grumman Corp. |
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Product Catalog | |
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Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
SiC vs GaN vs Si: Find The Right Fit For Your Application
Explore Wolfspeed Silicon Carbide Power and GaN on Silicon Carbide RF solutions to enable your high performance systems.