Features
- 8.4 – 9.6 GHz Operation
- 80 W POUT typical
- 10 dB Power Gain
- 55 % Typical PAE
- 50 Ohm Internally Matched
- <0.1 dB Power Droop
CGHV96050F2
CGHV96050F2
50-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched GaN HEMT
NOTE: Not recommended for new designs.
Wolfspeed’s CGHV96050F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
Product SKU | Buy Online | Request Sample | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV96050F2-AMP | Yes | GaN on SiC | 8.4 GHz | 9.6 GHz | 50 W | 10 dB | NA | 40 V | Evaluation Board | Flange | |||
CGHV96050F2 | Yes | GaN on SiC | 7.9 GHz | 9.6 GHz | 50 W | 10 dB | 55% | 40 V | Packaged Discrete Transistor | Flange |
Applications
- Marine Radar
- Weather Monitoring
- Air Traffic Control
- Maritime Vessel Traffic Control
- Port Security
- Technical & Sales Documents
- Tools & Support
- Compliance
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Document Type | Document Name |
|---|---|
| Data Sheets | |
| Technical Papers & Articles | by Donald A. Gajewski – Wolfspeed
Randall D. Lewis – Northrop Grumman Corp. Benjamin M. Decker – Northrop Grumman Corp. |
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Product Catalog | |
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Knowledge Center
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