Features
- 8.4 – 9.6 GHz Operation
- 80 W POUT typical
- 10 dB Power Gain
- 55 % Typical PAE
- 50 Ohm Internally Matched
- <0.1 dB Power Droop
CGHV96050F2
CGHV96050F2
50-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched GaN HEMT
Wolfspeed’s CGHV96050F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
Product SKU | Buy Online | Request Sample | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV96050F2 | Yes | GaN on SiC | 7.9 GHz | 9.6 GHz | 50 W | 10 dB | 55% | 40 V | Packaged Discrete Transistor | Flange | |||
CGHV96050F2-AMP | Yes | GaN on SiC | 8.4 GHz | 9.6 GHz | 50 W | 10 dB | NA | 40 V | Evaluation Board | Flange |
Product SKU | Buy Online | Request Sample | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV96050F2 | Yes | GaN on SiC | 7.9 GHz | 9.6 GHz | 50 W | 10 dB | 55% | 40 V | Packaged Discrete Transistor | Flange | |||
CGHV96050F2-AMP | Yes | GaN on SiC | 8.4 GHz | 9.6 GHz | 50 W | 10 dB | NA | 40 V | Evaluation Board | Flange |
Applications
- Marine Radar
- Weather Monitoring
- Air Traffic Control
- Maritime Vessel Traffic Control
- Port Security
- Documentation
- Evaluation Tools & Support
Apply Filters
Document Type | Document Name |
|---|---|
Data Sheets | |
Technical Papers & Articles | by Donald A. Gajewski – Cree – Inc.
Randall D. Lewis – Northrop Grumman Corp. Benjamin M. Decker – Northrop Grumman Corp. |
Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
|
Product Ecology | CGHV37400F – CGHV50200F – CGHV59350F – CGHV96050F1 – CGHV96050F2 – CGHV96100F2 – CGHV96130F
|
Product Ecology | CGHV37400F – CGHV50200F – CGHV59350F – CGHV96050F1 – CGHV96050F2 – CGHV96100F2,
CGHV96130F |
Product Catalog | |
Sales Terms |
Document Type | Document Name |
|---|---|
| Data Sheets | |
| Technical Papers & Articles | by Donald A. Gajewski – Cree – Inc.
Randall D. Lewis – Northrop Grumman Corp. Benjamin M. Decker – Northrop Grumman Corp. |
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
|
| Product Ecology | CGHV37400F – CGHV50200F – CGHV59350F – CGHV96050F1 – CGHV96050F2 – CGHV96100F2 – CGHV96130F
|
| Product Ecology | CGHV37400F – CGHV50200F – CGHV59350F – CGHV96050F1 – CGHV96050F2 – CGHV96100F2,
CGHV96130F |
| Product Catalog | |
| Sales Terms |
Knowledge Center
GaN on SiC
Thermal Considerations for X-Band MMICs Under CW Operation
Join Kasyap Patel of Wolfspeed for a live webinar on September 20th as we discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
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Webinars
GaN on SiC
RF Power Amplification 101: Amplifier Classes
The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
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Technical Articles
GaN on SiC
Countering RCIEDs with GaN’s Bandwidth & Power Density Advantages
Counter-RCIED devices used by the military and law enforcement rely on jamming wireless trigger signals. This article will discuss how GaN’s high-temperature reliability and power density capability enables jammer equipment to meet system SWaP-C requirements.
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