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Peak Output Power 50W
Application Satellite Communications
Typical Power Added Efficiency PAE 33 %
Typical Power (PSAT) 80 W
Power Gain 13 dB Minimum
Operating Voltage 40 V
Frequency 7.9 - 8.4 GHz
Package Type Flange
Drain Efficiency 33 %
Internal Matching Yes - 50Ω

50-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output Matched GaN HEMT

SKU: CGHV96050F1


Wolfspeed’s CGHV96050F1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

Features

  • 80 W POUT typical

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