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Peak Output Power 100W
Application L-Band / S-Band / X-Band / C-Band / Ku-Band
Typical Power Added Efficiency PAE 45 %
Typical Power (PSAT) 145 W
Power Gain 10 dB
Operating Voltage 40 V
Frequency 7.9 - 9.6 GHz
Package Type Flange
Internal Matching Yes - 50Ω

100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier

SKU: CGHV96100F2


Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

Features

  • 145 W POUT typical

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