Features
- Industry-leading RDS(on)
- High-speed switching
- Low capacitances
- Easy to parallel
- Simple to drive
- Pb-free plating
- RoHS-compliant
- Halogen-free
CMF20120D
CMF20120D
Z-FET SiC MOSFET N-Channel Enhancement Mode
Product SKU | Data Sheet | Blocking Voltage | RDS(ON) at 25°C | Package | Recommended For New Design? | Qualification |
|---|---|---|---|---|---|---|
CMF20120D | 1200 V | 80 mΩ | TO-247-3 | Yes | Industrial |
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Avalanche ruggedness
- Increased system switching frequency
- Technical & Sales Documents
- Compliance
Apply Filters
Document Type | Document Name |
|---|---|
| Application Notes | |
| Application Notes | [Design only; boards no longer available]
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| Application Notes | |
| Data Sheets | |
| Sales Terms |
Knowledge Center
3.6kW Bridgeless Totem-Pole PFC Reference Design Training
Join Yuequan Hu, Power Applications Engineer with Wolfspeed, as he demonstrates the application of Wolfspeed’s C3M™ 650 V Silicon Carbide MOSFET Technology in TOLL package to create a 3.6kW bridgeless totem-pole PFC for server power supply, data center power supply, mining power supply, and telecom systems.
Introducing EAB450M12XM3: Wolfspeed’s first Automotive-Qualified Silicon Carbide Power Module
Wolfspeed’s auto qualified EAB450M12XM3 power module maximizes the benefits of Silicon Carbide. At half the weight and volume of a standard 62 mm module, the XM3 enables high efficiency and high power density in the most demanding automotive applications.
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Technical ArticlesIn The Studio: The History, Transition and Trends of Silicon Carbide
Join Wolfspeed’s Guy Moxey and special guest Bodo Arlt, founder of Bodo’s Power Systems, at PCIM as they discuss the history of silicon, the big milestones bringing us to today’s breakthrough markets enabled by Silicon Carbide, and the future being all about wide bandgap semiconductors.
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In The Studio