Features
- Industry-leading RDS(on)
- High-speed switching
- Low capacitances
- Easy to parallel
- Simple to drive
- Pb-free plating
- RoHS-compliant
- Halogen-free
CMF20120D
1200 V; 80 mΩ; ; TO-247-3 package; Discrete Silicon Carbide (SiC) MOSFET
Wolfspeed’s family of 1200 V Silicon Carbide (SiC) MOSFETs are optimized for use in high power applications such as UPS; motor control and drives; switched-mode power supplies; solar and energy storage systems; electric vehicle charging; high-voltage DC/DC converters; and more.
Based on 3rd generation technology; the wide variety of on-resistances and package options enables designers to select the right part for their applications.
Pairing Wolfspeed’s 1200 V Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency for demanding applications.
Products
CMF20120D
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CMF20120D
Product SKU | Data Sheet | Blocking Voltage | RDS(ON) at 25°C | Package | Recommended For New Design? | Qualification |
|---|---|---|---|---|---|---|
CMF20120D | 1200 V | 80 mΩ | TO-247-3 | Yes | Industrial |
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Avalanche ruggedness
- Increased system switching frequency
Documents, Tools & Support
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Documents
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| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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Knowledge Center
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Wolfspeed’s Silicon Carbide MOSFETs Address High-Power Application Needs
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