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CMPA0060002

Composite of 3 product shots displaying the amp board, die package, and flange package types.
2-W; 20-MHz – 6000-MHz; GaN MMIC Power Amplifier

Wolfspeed’s CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach; enabling extremely wide bandwidths to be achieved in a small footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.

CMPA0060002

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA0060002F1
Yes
GaN on SiC
DC
6 GHz
2 W
18 dB
25%
28 V
Packaged MMIC
Flange
CMPA0060002D
Yes
GaN on SiC
DC
6 GHz
2 W
17 dB
30%
28 V
MMIC Bare Die
Die
CMPA0060002F
Yes
GaN on SiC
DC
6 GHz
2 W
17 dB
23%
28 V
Packaged MMIC
Flange
CMPA0060002F-AMP
Yes
GaN on SiC
DC
6 GHz
2 W
17 dB
23%
28 V
Evaluation Board
Flange
CMPA0060002F1-AMP
Yes
GaN on SiC
DC
6 GHz
2 W
18 dB
25%
28 V
Evaluation Board
Flange
Features
  • 17 dB Small Signal Gain
  • 3 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • Ultra Broadband Amplifiers
  • Fiber Drivers
  • Test Instrumentation
  • EMC Amplifier Drivers

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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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