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CMPA0060025D

Wolfspeed CMPA0060025D 25W 20MHz-6.0GHz GaN MMIC
Peak Output Power 25W
Application General-Purpose Broadband, 50 V
Typical Power (PSAT) 30 W
Operating Voltage 50 V
Breakdown Voltage High
Frequency DC - 6.0 GHz
Package Type Die
Small Signal Gain 18 dB
Size 0.157 x 0.094 x 0.004 in

25-W, 20-MHz – 6.0-GHz, GaN MMIC Power Amplifier

SKU: CMPA0060025D

Wolfspeed’s CMPA0060025D is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths.

Documents

Data Sheets

Document Name Date Updated Download
CMPA0060025D
Version: 2.0
Jun 1, 2017

RF Application Notes

Document Name Date Updated Download
15 Years of GaN MMIC Technology Leadership Apr 8, 2019
Eutectic Die Attach Procedure
Version: A
Sep 3, 2015
Thermal Performance Guide for High Power SiC MESFET and GaN HEMT Transistors
Version: A
Apr 8, 2019

RF Product Ecology

Document Name Date Updated Download
GaN MMIC Chips RoHS Declaration
Version: RS4069012019
CMPA0060002D, CMPA0060025D, CMPA1C1D060D, CMPA1D1E030D, CMPA1D1E050D, CMPA2060025D, CMPA2560025D, CMPA2735015D, CMPA2735075D, CMPA5080025D, CMPA5585025D, CMPA5585030D, CMPA601C025D, CMPA801B025D, CMPA901A040D
Mar 1, 2019

RF Videos

Document Name Date Updated Download
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture Nov 2, 2018
Webinar: Design of an 800W GaN Power Amplifier Stage for Pulsed L Band Applications Feb 17, 2017

Sales Terms

Document Name Date Updated Download
Sales Terms and Conditions
Version: M
May 22, 2019

Technical Papers & Articles

Document Name Date Updated Download
A Review of GaN on SiC HEMTs and MMICs
Version: Design
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Apr 8, 2019
Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies
Version: Design
by Donald A. Gajewski, Scott Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, and John Palmour.

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Oct 12, 2018
Reliability of GaN/AlGaN HEMT MMIC Technology on 100-mm 4H-SiC
Version: Design
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Apr 8, 2019