CMPA0060025D

Peak Output Power		25W
Application		General-Purpose Broadband, 50 V
Typical Power (PSAT)		30 W
Operating Voltage		50 V
Breakdown Voltage		High
Frequency		DC - 6.0 GHz
Package Type		Die
Small Signal Gain		18 dB
Size		0.157 x 0.094 x 0.004 in

25-W, 20-MHz – 6.0-GHz, GaN MMIC Power Amplifier

SKU: CMPA0060025D

Wolfspeed’s CMPA0060025D is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths.

Documents

Data Sheets

Document Name	Date Updated	Download
CMPA0060025D Version: 2.0	Jun 1, 2017

RF Application Notes

Document Name	Date Updated	Download
15 Years of GaN MMIC Technology Leadership	Apr 8, 2019
Eutectic Die Attach Procedure Version: A	Sep 3, 2015
Thermal Performance Guide for High Power SiC MESFET and GaN HEMT Transistors Version: A	Apr 8, 2019

RF Product Ecology

Document Name	Date Updated	Download
GaN MMIC Chips RoHS Declaration Version: RS4069012019 CMPA0060002D, CMPA0060025D, CMPA1C1D060D, CMPA1D1E030D, CMPA1D1E050D, CMPA2060025D, CMPA2560025D, CMPA2735015D, CMPA2735075D, CMPA5080025D, CMPA5585025D, CMPA5585030D, CMPA601C025D, CMPA801B025D, CMPA901A040D	Mar 1, 2019

RF Videos

Document Name	Date Updated	Download
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture	Nov 2, 2018
Webinar: Design of an 800W GaN Power Amplifier Stage for Pulsed L Band Applications	Feb 17, 2017

Sales Terms

Document Name	Date Updated	Download
Sales Terms and Conditions Version: M	Apr 15, 2019

Technical Papers & Articles

Document Name	Date Updated	Download
A Review of GaN on SiC HEMTs and MMICs Version: Design by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble	Apr 8, 2019
Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies Version: Design by Donald A. Gajewski, Scott Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, and John Palmour. This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.	Oct 12, 2018
Reliability of GaN/AlGaN HEMT MMIC Technology on 100-mm 4H-SiC Version: Design by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.	Apr 8, 2019