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Wolfspeed RF CMPA0527005F flange package
5-W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers
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CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 0.5 – 2.7 GHz. The transistor is available in a 6 leaded flange package.

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Frequency Min
Frequency Max
Peak Output Power
Operating Voltage
Package Type
GaN on SiC
0.5 GHz
2.7 GHz
5 W
20 dB
50 V
Evaluation Board
GaN on SiC
0.5 GHz
2.4 GHz
5 W
20 dB
50 V
Packaged MMIC
  • Up to 2.7 GHz Operation
  • 8 W Typical Output Power
  • 20 dB Small Signal Gain
  • Application Circuit for 0.5 – 2.7 GHz
  • 50% Efficiency
  • 50 V Operation
  • Amplifier Predriver from 0.5 – 2.7 GHz
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Application Notes
Operating at 50 V and 100 W
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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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Knowledge Center

Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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