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Peak Output Power 5W
Application General-Purpose Broadband, 50 V
Operating Voltage 50 V
Frequency 0.5 - 2.7 GHz
Package Type Flange
Small Signal Gain 20 dB
Drain Efficiency 47%
Technology GaN on SiC

5-W, 0.5 - 2.7 GHz, 50 V, GaN MMIC for Power Amplifiers

SKU: CMPA0527005F

CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 0.5 - 2.7 GHz. The transistor is available in a 6 leaded flange package.


  • 50-ohm matched input, unmatched output
  • 8 W (CW) typical Pout
  • 20 dB Typical Small Signal Gain
  • 50 V Operation



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