CMPA2060035

35-W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier

Wolfspeed’s CMPA2060035 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved in a small-footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.

Products

CMPA2060035

Product SKU	Recommended For New Design?	Technology	Frequency Min	Frequency Max	Peak Output Power	Gain	Efficiency	Operating Voltage	Form	Package Type
CMPA2060035D	Yes	GaN on SiC	2 GHz	6 GHz	35 W	29 dB	42%	28 V	MMIC Bare Die	Die
CMPA2060035F-AMP1	Yes	GaN on SiC	2 GHz	6 GHz	35 W	27 dB	35%	32 V	Evaluation Board	Flange
CMPA2060035F-AMP	Yes	GaN on SiC	2 GHz	6 GHz	35 W	27 dB	35%	28 V	Evaluation Board	Flange
CMPA2060035F	Yes	GaN on SiC	2 GHz	6 GHz	35 W	27 dB	35%	28 V	Packaged MMIC	Flange
CMPA2060035F1	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Packaged MMIC	Flange
CMPA2060035F1-AMP	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Evaluation Board	Flange

Features

28 dB Small Signal Gain
35 W Typical PSAT
Operation up to 32 V
High Breakdown Voltage
High Temperature Operation

Applications

Ultra Broadband Drivers
Fiber Drivers
Test Instrumentation
EMC Amplifier Drivers

Documents, Tools & Support

Technical & Sales Documents
Tools & Support
Compliance

Documents

Apply Filters

Document Type	Document Name
Design Files
Design Files
Design Files
Design Files
Data Sheets
Data Sheets
Data Sheets
Technical Papers & Articles	by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles	by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles	by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles	by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Technical Papers & Articles
Technical Papers & Articles
Product Catalog
Sales Terms

Need information?

Buy Online

Find a Distributor

Stay Informed

Knowledge Center

View All

Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Technical Articles

Communications Infrastructure

Wolfspeed RF GaN meets 5G demands on PA design

Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.

Technical Articles

Power

Silicon Carbide

SiC vs GaN vs Si: Find The Right Fit For Your Application

Explore Wolfspeed Silicon Carbide Power and GaN on Silicon Carbide RF solutions to enable your high performance systems.

Infographic