Features
- 28 dB Small Signal Gain
- 35 W Typical PSAT
- Operation up to 32 V
- High Breakdown Voltage
- High Temperature Operation
CMPA2060035
35-W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier
Wolfspeed’s CMPA2060035 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved in a small-footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.
Products
CMPA2060035
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CMPA2060035
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA2060035D | Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 29 dB | 42% | 28 V | MMIC Bare Die | Die | ||||
CMPA2060035F-AMP1 | Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 27 dB | 35% | 32 V | Evaluation Board | Flange | ||||
CMPA2060035F-AMP | Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 27 dB | 35% | 28 V | Evaluation Board | Flange | ||||
CMPA2060035F | Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 27 dB | 35% | 28 V | Packaged MMIC | Flange | ||||
CMPA2060035F1 | Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 30 dB | 30% | 28 V | Packaged MMIC | Flange | ||||
CMPA2060035F1-AMP | Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 30 dB | 30% | 28 V | Evaluation Board | Flange |
Applications
- Ultra Broadband Drivers
- Fiber Drivers
- Test Instrumentation
- EMC Amplifier Drivers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
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| Design Files | |
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| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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| Product Catalog | |
| Sales Terms |
Knowledge Center
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