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CMPA2060035

Wolfspeed CMPA2060035F
35-W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier

Wolfspeed’s CMPA2060035 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved in a small-footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.

CMPA2060035

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA2060035D
Yes
GaN on SiC
2 GHz
6 GHz
35 W
29 dB
42%
28 V
MMIC Bare Die
Die
CMPA2060035F-AMP1
Yes
GaN on SiC
2 GHz
6 GHz
35 W
27 dB
35%
32 V
Evaluation Board
Flange
CMPA2060035F-AMP
Yes
GaN on SiC
2 GHz
6 GHz
35 W
27 dB
35%
28 V
Evaluation Board
Flange
CMPA2060035F
Yes
GaN on SiC
2 GHz
6 GHz
35 W
27 dB
35%
28 V
Packaged MMIC
Flange
CMPA2060035F1
Yes
GaN on SiC
2 GHz
6 GHz
35 W
30 dB
30%
28 V
Packaged MMIC
Flange
CMPA2060035F1-AMP
Yes
GaN on SiC
2 GHz
6 GHz
35 W
30 dB
30%
28 V
Evaluation Board
Flange
Features
  • 28 dB Small Signal Gain
  • 35 W Typical PSAT
  • Operation up to 32 V
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • Ultra Broadband Drivers
  • Fiber Drivers
  • Test Instrumentation
  • EMC Amplifier Drivers

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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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Technical Papers & Articles
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