Features
- 35 dB Small Signal Gain
- 20 W Typical PSAT
- Operation up to 50 V
- High Breakdown Voltage
- High Temperature Operation
CMPA2735015
15 W; 2.7 to 3.5 GHz; 50 V; GaN MMIC Power Amplifier
Wolfspeed’s CMPA2735015 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
Products
CMPA2735015
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CMPA2735015
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA2735015D | Yes | GaN on SiC | 2.7 GHz | 3.5 GHz | 15 W | 32 dB | 45% | 50 V | MMIC Bare Die | |||||
CMPA2735015S | Yes | GaN on SiC | 2.7 GHz | 3.5 GHz | 15 W | 33 dB | 50% | 50 V | Packaged MMIC | Plastic |
Applications
- Civil and Military Pulsed Radar Amplifiers
Documents, Tools & Support
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Documents
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| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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| Technical Papers & Articles | by Primit Parikh – Yifeng Wu – M. Moore – P. Chavarkar – U. Mishra – R. Neidhard – L. Kehias – T. Jenkins – AlGaN-GaN HEMTs have not only been identified as the technology of choice for next generation high-power – high frequency applications but recently have also garnered interest for low noise receiver applications.
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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Knowledge Center
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