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Peak Output Power 15W
Application Radar
Typical Power Added Efficiency PAE 52 W
Typical Power (PSAT) 21 W
Power Gain 27 dB
Operating Voltage 50 V
Frequency 2.7 - 3.5 GHz
Package Type Surface Mount
Small Signal Gain 33 dB
Technology GaN on SiC

15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

SKU: CMPA2735015S

Cree’s CMPA2735015S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling high power and power added efficiency to be achieved in a 5mm x 5mm, surface mount (QFN package).


  • 33 dB Small Signal Gain
  • 21 W Typical PSAT
  • Operation up to 50 V
  • High Breakdown Voltage
  • High Temperature Operation
  • 5 mm x 5 mm Total Product Size



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