Features
- 3.1 – 3.5 GHz Operation
- 75 W Typical Output Power
- 29 dB Power Gain
- 50-ohm Matched for Ease of Use
- Plastic Surface-Mount Package; 7×7 mm QFN
Product SKU | Buy Online | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
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CMPA3135060S | Yes | GaN on SiC | 3.1 GHz | 3.5 GHz | 75 W | 20 dB | 55% | 50 V | Packaged MMIC | Plastic, Surface Mount |
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Application Notes | |
Application Notes | |
Application Notes | |
Application Notes | |
Design Files | |
Design Files | |
Data Sheets | |
S-parameters | |
S-parameters | |
S-parameters | |
S-parameters | |
S-parameters | |
S-parameters | |
S-parameters | |
Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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Technical Papers & Articles | by Simon M. Wood – Ulf Andre – Bradley J. Millon – and Jim Milligan – This paper presents the design – development and characterization of three products for S-Band Radar applications. These products include two 240 Watt hybrid power transistors and a fully integrated 75 Watt packaged MMIC.
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Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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