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CMPA5259050

CMPA5259050

cmpa5259050
50-W; 5200 – 5900-MHz; 28 V; GaN MMIC for Radar Power Amplifiers

Cree’s CMPA5259050 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CMPA5259050 ideal for 5.2 – 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Product SKU
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA5259050F
Yes
GaN on SiC
5.2 GHz
5.9 GHz
50 W
30 dB
54%
28 V
Packaged MMIC
Flange
CMPA5259050F-AMP
Yes
GaN on SiC
5.2 GHz
5.9 GHz
50 W
30 dB
NA
28 V
Evaluation Board
Flange
CMPA5259050S
New
Yes
GaN on SiC
5.2 GHz
5.9 GHz
50 W
30 dB
50%
28 V
Packaged MMIC
Surface Mount
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA5259050F
Yes
GaN on SiC
5.2 GHz
5.9 GHz
50 W
30 dB
54%
28 V
Packaged MMIC
Flange
CMPA5259050F-AMP
Yes
GaN on SiC
5.2 GHz
5.9 GHz
50 W
30 dB
NA
28 V
Evaluation Board
Flange
CMPA5259050S
New
Yes
GaN on SiC
5.2 GHz
5.9 GHz
50 W
30 dB
50%
28 V
Packaged MMIC
Surface Mount
Features
  • 31 dB Small Signal Gain
  • 50 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • AESA Radar
  • Defense Radar
  • Fire Control Radar
  • Naval; Marine; Ground Protection Radar
  • Weather Radar
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Document Type
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Version
Data Sheets
Version: 2.2
Data Sheets
Version: 1.0
Design Files
Version: 1.0
Design Files
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Version: 1.0
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Product Ecology
CMPA0060025F1 – CMPA2060035F – CMPA2735075F1 – CMPA5259025F – CMPA5259050F
Version: 1.0
Product Ecology
CMPA0060002D – CMPA0060025D – CMPA0527005D – CMPA1C1D060D – CMPA1D1E030D – CMPA1D1E050D – CMPA2060025D – CMPA2560025D – CMPA2735015D – CMPA2735075D – CMPA5080025D – CMPA5259030D – CMPA5259050D – CMPA5585025D – CMPA5585030D – CMPA601C025D – CMPA801B025D – CMPA901A040D
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
Document Type
Document Name
Version
Data Sheets
Version: 2.2
Data Sheets
Version: 1.0
Design Files
Version: 1.0
Design Files
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Version: 1.0
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Product Ecology
CMPA0060025F1 – CMPA2060035F – CMPA2735075F1 – CMPA5259025F – CMPA5259050F
Version: 1.0
Product Ecology
CMPA0060002D – CMPA0060025D – CMPA0527005D – CMPA1C1D060D – CMPA1D1E030D – CMPA1D1E050D – CMPA2060025D – CMPA2560025D – CMPA2735015D – CMPA2735075D – CMPA5080025D – CMPA5259030D – CMPA5259050D – CMPA5585025D – CMPA5585030D – CMPA601C025D – CMPA801B025D – CMPA901A040D
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
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