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Peak Output Power 55W at PIN = 26 dBm
Application C-Band
Operating Voltage 28 V
Frequency 5.2 - 5.9 GHz
Package Type Flange
Small Signal Gain 30 dB
Drain Efficiency 54%

50-W, 5200 – 5900-MHz, 28 V, GaN MMIC for Radar Power Amplifiers

SKU: CMPA5259050F


Cree’s CMPA5259050F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259050F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Features

  • 50-ohm matched
  • 55 W (Pulse Width = 100 µS, Duty Cycle = 10%) typical Pout
  • 31 dB Typical Small Signal Gain
  • 28 V Operation

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