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CMPA5259080
CMPA5259080
High power C-band MMIC for pulsed radar operation.
The CMPA5259080 is a high power; two-stage MMIC housed in a QFN package. Operating at 40V and at 25°C case temperature the device achieves over 100W of pulsed output power. The device is designed primarily for use as an output stage for highly integrated AESA radar type architecture with exceptional power capability. In addition; the high gain makes it suitable as a drive stage for a multi-device line-up using the Wolfspeed high power IMFETs as the final stage. The device is designed to operate under long pulse conditions up to 500uS at 10% duty cycle.
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA5259080S-AMP1 | Yes | GaN on SiC | 5.2 GHz | 5.9 GHz | 80 W | 22 dB | 44% | 40 V | Packaged MMIC | Surface Mount | ||||
CMPA5259080S | Yes | GaN on SiC | 5.2 GHz | 5.9 GHz | 80 W | 22 dB | 44% | 40 V | Packaged MMIC | Surface Mount |
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Knowledge Center
Thermal Considerations for High-Power GaN RF Amplifiers
Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
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