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Peak Output Power 30W
Application Satellite Communications
Typical Power Added Efficiency PAE 30%
Typical Power (PSAT) 35 W
Operating Voltage 28 V
Breakdown Voltage High
Frequency 5.5 - 8.5 GHz
Package Type Flange
Small Signal Gain 25 dB
Size 1.00 x 0.385 in
Efficiency 30%

30-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier

SKU: CMPA5585030F


Wolfspeed’s CMPA5585030F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.

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