Contact
中文
Home
CMPA601C025

CMPA601C025

Wolfspeed CMPA601C025F GaN MMIC Power Amplifier
25 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier

Wolfspeed’s CMPA601C025 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-μm gate-length fabrication process. GaN on SiC has superior properties compared to silicon; gallium arsenide or GaN on Si; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si; GaAs; and GaN on Si transistors. This MMIC contains a reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA601C025D
Yes
GaN on SiC
6 GHz
12 GHz
25 W
32 dB
32%
28 V
MMIC Bare Die
Die
CMPA601C025F
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
32%
28 V
Packaged MMIC
Flange
CMPA601C025F-AMP
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
NA
28 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA601C025D
Yes
GaN on SiC
6 GHz
12 GHz
25 W
32 dB
32%
28 V
MMIC Bare Die
Die
CMPA601C025F
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
32%
28 V
Packaged MMIC
Flange
CMPA601C025F-AMP
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
NA
28 V
Evaluation Board
Flange
Features
  • 34 dB Small Signal Gain
  • 40 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
Applications
  • Jamming Amplifiers
  • Test Equipment Amplifiers
  • Broadband Amplifiers
  • Radar Amplifiers
Apply Filters
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
Design Files
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
Design Files
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
Need information?
Ready to buy?
Find a Distributor
Want to keep in touch?

Knowledge Center

View All
highpower_wideband_lband_image
GaN on SiC

Thermal Considerations for X-Band MMICs Under CW Operation

Join Kasyap Patel of Wolfspeed for a live webinar on September 20th as we discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
Register Now 
 Webinars
Jamming man-portable pack2
GaN on SiC

Countering RCIEDs with GaN’s Bandwidth & Power Density Advantages

Counter-RCIED devices used by the military and law enforcement rely on jamming wireless trigger signals. This article will discuss how GaN’s high-temperature reliability and power density capability enables jammer equipment to meet system SWaP-C requirements.
Continue Reading 
 Blog
RF PA 101_amplifier classes image
GaN on SiC

RF Power Amplification 101: Amplifier Classes

The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
Continue Reading 
 Technical Articles
Cree Wolfspeed Logo
FacebookTwitterLinkedInYouTube
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2021 Cree Wolfspeed