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Peak Output Power 25W
Application General-Purpose Broadband, 28 V
Typical Power (PSAT) 30 W
Operating Voltage 28 V
Breakdown Voltage High
Frequency 6.0 - 12.0 GHz
Small Signal Gain 32 dB
Size 0.172 x 0.239 x 0.004 in

25-W, 6.0 – 12.0-GHz, GaN MMIC Power Amplifier

SKU: CMPA601C025D


Wolfspeed’s CMPA601C025D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron d-rift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors. This MMIC contains a reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

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