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Peak Output Power 30W
Application Radar
Typical Power Added Efficiency PAE 36 W
Typical Power (PSAT) 35 W
Power Gain 16 dB
Operating Voltage 28 V
Frequency 8.0 - 11.0 GHz
Package Type Flange
Technology GaN on SiC

30 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier


Cree’s CMPA801B030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package for optimal electrical and thermal performance.


  • 8.0 - 11.0 GHz Operation
  • 37 W POUT typical
  • 16 dB Power gain
  • 36% Typical PAE
  • 50 Ohm internally matched



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