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本頁之後的所有內容均為英文。

Wolfspeed 金屬氧化物半導體場效應晶體管使開關頻率更高,並且縮小了像電感器、電容器、篩選器、變壓器這樣的組件的尺寸。我們的碳化硅金屬氧化物半導體場效應晶體管可取代硅器件,有更高的阻斷電壓(>1700V),雪崩額定值>1800V,開關和傳導損耗也較低。我們在五年前製造了首個碳化硅金屬氧化物半導體場效應晶體管,並且自那時起一直都在不斷完善這項技術。

不要忘記下載我們的 LT Spice 金屬氧化物半導體場效應晶體管模型。


分立元件

產品 新貨 阻斷電壓 (V) 下的漏源通態電阻 (mΩ) 額定電流 (A) 包裝 數據表
C3M0030090K 900 30 63 TO-247-4
C3M0065090J 900 65 35 TO-263-7
C3M0065090D 900 65 36 TO-247-3
C3M0120090D 900 120 23 TO-247-3
C3M0120090J 900 120 22 TO-263-7
C3M0280090J 900 280 11.5 TO-263-7
C3M0280090D 900 280 11.5 TO-247-3
C3M0065100K 1000 65 35 TO-247-4
C3M0065100J 1000 65 35 TO-263-7
C3M0120100K 1000 120 22 TO-247-4
C3M0120100J 1000 120 22 TO-263-7
C2M0025120D 1200 25 90 TO-247-3
C2M0040120D 1200 40 60 TO-247-3
C3M0075120K 1200 75 30 TO-247-4
C3M0075120J 1200 75 30 TO-263-7
C2M0080120D 1200 80 36 TO-247-3
C2M0160120D 1200 160 19 TO-247-3
C2M0280120D 1200 280 10 TO-247-3
C2M0045170P 1700 45 72 TO-247-4 Plus
C2M0045170D 1700 45 72 TO-247-3
C2M0080170P 1700 80 40 TO-247-4 Plus
C2M1000170D 1700 1000 5 TO-247-3
C2M1000170J 1700 1000 5.3 TO-263-7

裸芯片

產品 新貨 阻斷電壓 (V) 下的漏源通態電阻 (mΩ) 額定電流 (A) 包裝 數據表
CPM3-0900-0010A 900 10 196 Bare Die 現在請求
CPM3-0900-0030A 900 30 66 Bare Die 現在請求
CPM3-0900-0065B 900 65 36 Bare Die 現在請求
CPM3-1000-0065B 1000 65 36 Bare Die 現在請求
CPM2-1200-0025B 1200 25 98 Bare Die
CPM2-1200-0040B 1200 40 63 Bare Die
CPM2-1200-0080B 1200 80 36 Bare Die
CPM2-1200-0160B 1200 160 19 Bare Die
CPM2-1700-0045B 1700 45 72 Bare Die
CPM2-1700-0080B 1700 80 40 Bare Die 現在請求