In person event in London, UK. April 2 - 7
Enabling High Performance RF Power System Designs through Ka band.
Presenter: Bill Pribble
Date: 4/02/22 in Room 10
There is a growing need for higher performing MMIC HPAs to support currently growing markets such as 5G telecommunications, satellite communications, and AESA radar systems through Ka-band. Size and performance requirements demand excellent power density, efficiency and linearity in order to make evolving systems feasible. While performance is of primary importance in these applications, cost must be considered for commercial systems. A key driver of cost is MMIC packaging and so we will also discuss some challenges with surface mount and high-frequency metal-ceramic packages. This presentation we will discuss these demands, focus on key developments to enable these MMICs, and present examples of designs that address these needs.
Product SKU | Buy Online | Request Sample | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA901A020S | Yes | GaN on SiC | 9 GHz | 10 GHz | 35 W | 30 dB | 45% | 28 V | Packaged MMIC | Plastic | |||
CMPA1C1D080F | No | GaN on SiC | 12.75 GHz | 13.25 GHz | 90 W | 25 dB | 30% | 40 V | Packaged MMIC | Flange | |||
GTVA101K42EV-V1 | Yes | GaN on SiC | 0.96 GHz | 1.4 GHz | 1400 W | 17 dB | 68% | 50 V | Packaged Discrete Transistor | Bolt Down |
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GTRB226002FC-V1 | Yes | GaN on SiC | 2.11 GHz | 2.2 GHz | 450 W | 15 dB | 60% | 48 V | Packaged Discrete Transistor | Earless | ||
GTRB266908FC-V1 | Yes | GaN on SiC | 2.515 GHz | 2.675 GHz | 500 W | 15 dB | 52% | 48 V | Packaged Discrete Transistor | Earless |
Offering design assistance, proven processes, testing, and support for first pass design success
MMICs now available with Environmental Encapsulant and Scratch Coat (EE+SC) for improved robustness
We created the industry’s first GaN HEMT on Silicon Carbide and for the last 20 years have focused on investing in tomorrow’s innovative RF solutions by partnering with the world’s designers to improve system size, weight, and power.
As a pioneer in gallium nitride semiconductors, we now field a broad portfolio of the most capable next-generation, GaN on SiC based HEMTs (as packaged & bare die), MMIC power amplifiers, as well as LDMOS devices for all your RF system design needs.
We are the only vertically-integrated semiconductor manufacturer and control 100% of our GaN and SiC material supply. We doubled our production capacity in 2018 and will continue to expand our capacity to meet the expected market growth by 2024.
