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IMS 2022

June 19 - 24, 2022

​​​​​​Visit Wolfspeed in person at the exhibition June 21 – 23!

IMS is the flagship event in a week dedicated to all things microwaves and RF. The week also includes the IEEE MTT-S Radio Frequency Integrated Circuits Symposium (RFIC) and the Automatic Radio Frequency Techniques Group (ARFTG). Wolfspeed is excited to showcase our new brand with a renewed focus on GaN on SiC RF solutions for Aerospace, Defense, and Communications Infrastructure applications. Visit us in Booth 2060 to meet our experts and help you discover next-generation performance or reach out to our team and today.

Seminar Presenter Yueying Liu

MicroApps Seminar

Presenter: Yueying Liu
Time: 6/22/22 13:00 - 13:15
Location: Show Floor Booth 9110

GaN Nonlinear Large Signal Device Modeling – a necessary tool for 1st pass Power Amplifier design success

Abstract: In this workshop, an overview of Wolfspeed large signal nonlinear device model will be presented. Wolfspeed GaN model has successfully assisted designers achieving many successful 5G mMIMO, Macro and Aerospace and Defense PA designs using Wolfspeed’s GaN HEMT foundry services and Wolfspeed’s catalogue product parts. Designers often achieved design specs with first pass iteration and greatly reduced design cost and design cycles using the model. The presentation will cover the core aspects of Wolfspeed nonlinear GaN HEMT model. A detailed discussion of usage guidelines and design boundaries will be covered along with key aspects of designing PA products using the model. This talk will demonstrate what makes Wolfspeed’s nonlinear model to be the top-quality model in the industry with priori successful design examples presented.


Product shot of CGHV35400F1


The Wolfspeed CGHV35400F1 has been upgraded for long-pulse S-Band applications and offers superior drain efficiency. It is matched to 50 ohms, operating from 2.9-3.5 GHz. At 50V, it can deliver >500W output power under long pulse conditions of 2mS pulse width at 20% duty cycle.

DatasheetBoard Design Files
Product shot of CMPA801B030S

CMPA801B030S X-Band GaN MMIC

The CMPA801B030S is a x-band two-stage MMIC housed in a plastic overmold QFN package allowing for compact module designs and easy assembly. Supporting the full x-band radar frequency range and generating over 40W of pulsed output power, it is an ideal solution that can support applications across air, ship, and ground-based platforms.

WSCPS240 S-Band Pallet

Wolfspeed is now offering turn-key solutions that provide easily integrated and flexible options to allow the rapid adoption of new technology – RF Pallets. The WSCPS240 is an S-band pallet design for radar applications using a balanced amplifier configuration and is designed for maximum flexibility.
Ask for more details at IMS Booth 2060

Featured Products

Wolfspeed logo overlaying multiple weather radar spheres

The New Wolfspeed, Still Improving SWaP-C with Innovative GaN on SiC Solutions

Communications Infrastructure

Communications Infrastructure

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Communications Infrastructure

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Data Sheet
Recommended For New Design?
Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
Package Type
GaN on SiC
2.515 GHz
2.675 GHz
500 W
15 dB
48 V
GaN on SiC
3.7 GHz
3.98 GHz
450 W
12 dB
48 V
GaN on SiC
3.3 GHz
3.8 GHz
440 W
12.3 dB
41 %
48 V

GaN Foundry Services

New Process now available! The G50V4 GaN on SiC 0.25um MMIC process enabling 50 V RF designs through X-Band is fully qualified; ask for more details. 

Offering design assistance, proven processes, testing, and support for greater first pass design success.

Request Free Online Foundry TrainingLearn More
Lab worker in the Wolfspeed RF Foundry attending to wafers coming out of the oven.

Knowledge Center

Aerospace & Defense

GaN HEMT Large Signal Models

GaN HEMTs offer power amplifier designers many improvements, but these same factors often make it difficult to predict accurately the device large-signal performance. Measuring the device performance quickly and accurately is paramount to first-pass design success.
Continue Reading  Technical Articles

Who Needs a GaN on SiC Foundry?

As semiconductor materials go, wide bandgap technologies are not only enabling new growth in application markets but pushing through the inertia of entrenched technologies. RF gallium nitride (GaN), particularly when implemented as GaN on silicon carbide (SiC) substrate, stands out as being the best suited for high-power applications.

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