PCIM Europe Digital Days 2020

Jeff Casady | July 7, 9:50 AM CET

Previously, 650V SiC and GaN have been reported for this application. What is unique in this publication is a first report of a 750V SiC MOSFET is presented in this work with Ni:Pd:Au metal for sintering on top and bottom, eliminating top-side wirebonds which are commonly an early failure point in modules. The 750V rating has a mean measured breakdown voltage distribution > 960V, with good margin for overshoot and cosmic ray FIT rate requirements. The 750V rated parts with the >960V BVDSS are more rugged than typical 650V rated devices.

Yuequan Hu | July 7, 3:30 PM CET

This paper presents a comparative study of packaging effects of Silicon Carbide (SiC) MOSFETs on switching losses and efficiency for a high-power (10kW) DC/DC Boost converter. A comparison of double pulse test (DPT) switching losses of a conventional 3-lead and 4-lead MOSFET with Kelvin source is detailed. Moreover, tests were done in a 10kW boost DC/DC converter, and comparison of waveforms, switching losses, efficiency, and thermal measurement is provided to show the real benefits of 4-lead package for SiC power MOSFETs.

Jianwen Shao | July 7, 3:30 PM CET

The first part of the paper presents a PCB thermal vias design recommendations for surface mount (SM) power device for relatively low power applications. The second part of the paper introduce an innovative ceramic-embedded Alumina Nitride (AlN) FR4 PCB solution for surface mount power devices in high power applications. This embedded AlN PCB solution provides excellent thermal conduction, and electrical isolation at same time. Finally, A 6.6kW EV on-board charger power converter is developed based on this AlN embedded PCB.

Guy Moxey | July 8, 12:00 PM CET

Efficiency is the most important game changer in systems. Wide Band Gap power semiconductors have paved the way. 16 experts from leading Industry will be part of the presentations and discussions about usage of Wide Band Gap power Semiconductors. 8 experts will present About SiC for the first session and another 8 experts will do the GaN. Efficiency is what counts first in the game.

Chen Wei | July 8, 2:05 PM CET

This paper presents a SiC MOSFET-based 22 kW bi-directional CLLC resonant converter for Electric Vehicle (EV) on-board charger (OBC), with high efficiency and high power density. To achieve high efficiency in both charging and discharging mode, a novel flexible gain control scheme of the CLLC resonant converter is studied in the paper. A digital controlled prototype with a switching frequency of 140kHz-250kHz is demonstrated with 8kW/L power density exceeding 98% in peak efficiency in both charging and discharging mode.

Yuequan Hu | July 8, 2:15 PM CET

This paper presents the application of Silicon Carbide (SiC) devices in a high-frequency LLC resonant DC/DC converter. With high switching frequencies, the leakage inductance of the LLC transformer can be used as the resonant inductor, resulting in 50% reduction in volume and weight, and 30% decrease in power loss of the magnetic components at 500kHz and 6.6kW/400V output. Experimental results have demonstrated the superb performance of SiC power devices over Si-based counterparts with a near 98.5% peak converter efficiency at 500kHz.