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PCIM Europe Digital Days 2020

Join Wolfspeed July 7-8 for the first ever PCIM Digital Days. Our experts will be signed on to answer your questions and discuss our latest products live from 9am-5pm CET.

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Why Wolfspeed?

SiC Expertise

Wolfspeed’s founders were the first to successfully synthesize silicon carbide and for the last 30 years have focused on devising and supplying the world’s power systems designers with the industry’s highest performing SiC technologies for high-power applications.


As a pioneer in silicon carbide semiconductors, we now field the world’s broadest, most capable portfolio of next-generation, SiC-based MOSFETs, Schottky diodes and power modules for power and industry needs.


We are the only vertically-integrated semiconductor manufacturer and control 100% of our SiC material supply. We doubled our production capacity in 2018, are on track to double capacity again by the end of 2020, and have committed $1 billion to grow SiC wafer and device production capacity 30-fold by 2024.

Announcing our 650 V Series of Silicon Carbide

Designed to withstand the demands of today's high-powered applications with the industry's lowest on-state resistances and switching losses for higher-efficiency, power-dense solutions.

Investing $720M Over Five Years to Expand Silicon Carbide Capacity

Creating an east coast silicon carbide corridor with new wafer fab and mega materials factory expansion, including a >350,000 square foot fabrication facility with 200mm capable power and RF wafer fabrication.

in silicon carbide wafer fabrication
in silicon carbide materials production
compared to previously planned facility
automotive-qualified production facility in Marcy, NY


Corporate headshot of Jeff Cassidy

750V, 10.5mOhm SiC Power MOSFET for Use in Electric Vehicles

Jeff Casady | July 7, 9:50 AM CET

Previously, 650V SiC and GaN have been reported for this application. What is unique in this publication is a first report of a 750V SiC MOSFET is presented in this work with Ni:Pd:Au metal for sintering on top and bottom, eliminating top-side wirebonds which are commonly an early failure point in modules. The 750V rating has a mean measured breakdown voltage distribution > 960V, with good margin for overshoot and cosmic ray FIT rate requirements. The 750V rated parts with the >960V BVDSS are more rugged than typical 650V rated devices.

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A Designer's Guide to Silicon Carbide Power

Bridging to the future with the Bridgeless Totem-Pole PFC Topology

Revolutionizing Inverter Power Density using SiC MOSFET Modules


A close up product image of a Wolfspeed 60kW Dual Inverter

600 kW Three Phase Dual Inverter

The 600 kW three-phase inverter demonstrates system-level power density and efficiency obtained by using Wolfspeed’s XM3 module platform.

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Close up product shot of a Wolfspeed High Power On-Board Charger

6.6 kW High Power Density Bi-Directional EV On-Board Charger

The 6.6 kW Bi-Directional On-Board Charger (OBC) targets high-power-density, high-efficiency on-board charger applications and features Wolfspeed’s new 650V C3M SiC MOSFETs.

A close up product shot of a Wolfspeed DC to DC On Board Charger

22 kW High Efficiency Bi-Directional DCDC Converter for EV-On-Board Charger

The 22kW bi-directional CLLC resonant converter targets wide output voltage range, high-efficiency and high-power-density bi-directional applications such as electric vehicle on-board chargers and energy storage system.

A close up product photo of Wolfspeed's Traction Motor Inverter

180 kW SiC MOSFET-Based Traction Motor Inverter Platform

The 180 kW SiC MOSFET based traction inverter is a dyno- ready functional safety capable platform jointly developed by Wolfspeed, NXP and Vepco.

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