Durham, N.C., March 2, 2016 — Wolfspeed, A Cree Company, announced that as of the end of 2015, it shipped GaN-on-SiC RF power transistors with a combined RF output power of more than 1.3 gigawatts. Wolfspeed achieved this milestone while maintaining a failure-in-time rate (FIT rate) of 5-per-billion device hours, illustrating the industry-leading reliability and performance of Wolfspeed’s GaN-on-SiC devices.
“Wolfspeed’s achievement, exceeding 100 billion total hours of field operation for GaN-on-SiC devices, is the largest known body of fielded data accumulated by any domestic GaN supplier to date, and includes not only discrete transistors, but complex multi-stage GaN MMICs as well,” said Jim Milligan, RF and microwave director, Wolfspeed. “Our production numbers reflect the increasingly widespread adoption of GaN-on-SiC RF technology in military and aerospace systems, telecom base stations, wideband test equipment, civil radar, and medical applications."
For comparison, 1.3GW is the same power output as the energy required to power all of the LED street lights in Los Angeles for 22 years, or enough energy to power more than 124,900 U.S. residential homes for a year.
Wolfspeed is a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs). As the largest American producer of GaN-on-SiC RF wafer processing technology, Wolfspeed’s GaN HEMTs and MMICs enable enhanced innovation, performance, and efficiency across a broad spectrum of RF and microwave applications for both the commercial and military sectors. For more information about Wolfspeed’s RF components and foundry services, please visit wolfspeed.com/RF or contact Ryan Baker, RF marketing manager Wolfspeed, at firstname.lastname@example.org or 919-407-7816.
Wolfspeed, A Cree Company, is leading the innovation and commercialization of silicon carbide and gallium nitride, liberating designers to invent power and wireless systems for a responsible, energy-efficient future.
Wolfspeed’s wide bandgap semiconductor products for power and radio-frequency (RF) applications deliver new levels of performance through increased efficiency, higher switching frequency and reduced system size and weight for the transportation, industrial, energy and communications markets.
Cree is leading the LED lighting revolution and making energy-wasting traditional lighting technologies obsolete through the use of energy-efficient, mercury-free LED lighting. Cree is a market-leading innovator of lighting-class LEDs, LED lighting, and semiconductor products for power and radio frequency (RF) applications.
Cree’s product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and RF devices. Cree® products are driving improvements in applications such as general illumination, backlighting, electronic signs and signals, power suppliers and solar inverters.
Please refer to www.cree.com for additional product and company information.
This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including customer acceptance of our products; the risk that our customer’s plans for additional product purchases may change; the rapid development of new technology and competing products that may impair demand or render Cree’s products obsolete; and other factors discussed in Cree’s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 28, 2015, and subsequent filings.
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