DURHAM, N.C. --
Cree, Inc. (Nasdaq: CREE) announces demonstrations of its latest broadband GaN HEMT transistors (the CGH40120F and CGH40180PP) at the 2009 IEEE/MTT-S International Microwave Symposium being held this week in Boston. The demonstration amplifiers feature high efficiency and high power under continuous-wave (CW) operation, with typical power-added efficiencies (PAE) of 70% at saturated powers of 120W for the CGH40120F and 180W for the CGH40180PP in class A/B demonstration amplifiers.
“A number of very-high-efficiency amplifier architectures, routinely used at lower frequencies for audio and UHF applications, are being realized at much higher RF and microwave frequencies using GaN transistors,” said Jim Milligan, Cree director for RF and microwave products. “Published research indicates greater than 80% PAE using Class D, E, F and J amplifier architectures, with Cree GaN HEMT transistors, at frequencies over 2 GHz. More-typical Class A/B operation can also offer exceptional efficiency, validated by the demonstrations we are giving this week. Cree GaN transistors offer system designers a wide range of choices, supporting diverse application requirements.”
The CGH40120F and CGH40180F are the newest members of Cree’s general-purpose transistor product family. Samples and fixtures are available through Digi-Key. Large-signal models for Agilent’s ADS or AWR’s MWO simulators are available directly from Cree.
Cree is a market-leading innovator of semiconductor solutions for wireless and power applications, lighting-class LEDs, and LED lighting solutions.
Cree’s product families include power-switching devices and radio-frequency/wireless devices, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, and LED fixtures and bulbs. Cree solutions are driving improvements in applications such as variable-speed motors, wireless communications, general illumination, backlighting and electronic signs and signals.
For additional product and company information, please refer to www.cree.com
This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including the risk we may encounter delays or other difficulties in ramping up production of our new products; the potential lack of customer acceptance of the products; the rapid development of new technology and competing products that may impair demand or render Cree’s products obsolete; and other factors discussed in Cree’s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 29, 2008, and subsequent filings.