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Cree Enables "Game-Changing" Performance for High-Frequency, High-Power Commercial Radar and Satellite Communications

Jun 04, 2012
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DURHAM, NC -- Cree, Inc. (Nasdaq: CREE) announces the release of its high-efficiency X-Band, fully matched GaN HEMT transistors for commercial radar and satellite communications applications. Rated at 50W and 100W, these new GaN devices deliver “game- changing” efficiency and performance improvements when compared to existing GaAs MESFET transistors or Traveling Wave Tube (TWT) based amplifiers.

“The new Cree® X-Band GaN HEMT product family represents disruptive technology that we believe will set new standards of efficiency and performance for high-frequency, high-power applications such as satellite communications and X-Band commercial radar,” explained Jim Milligan, director, Cree RF and microwave. “The performance advantages of higher power ratings, higher linear efficiency and higher gain, combined with a reduced footprint, offer dramatic advantages when compared to GaAs MESFET transistors or TWT amplifiers. We believe this new product family will deliver comprehensive system benefits, including superior thermal management and significantly-reduced power supply loads. The new product family also offers a lower cost alternative to TWT amplifiers and associated high-voltage power supplies and linearization systems while improving overall system reliability.”

The X-Band product family consists of four new GaN HEMT transistors; two for satellite communications (CGHV96050F1 and CGH96100F1) and two for commercial radar applications (CGHV96050F2 and CGHV96100F2). All four transistors are offered in a small footprint (0.9 x 0.7”) package.


Output Power @ VDD=40V


Power Added Efficiency


50W (25W linear under OQPSK)


30% (Linear)


100W (50W linear under OQPSK)


28% (Linear)


50W Pulsed (100µSec, 10% duty)


50% (PSAT)


100W Pulsed (100µSec, 10% duty)


45% (PSAT)

The efficiency advantages in using these new GaN devices can be up to three times greater when compared to available GaAs MESFET transistors. Further, the wide video bandwidth of GaN HEMT transistors allows for their use in multi-carrier applications with two-tone spacing up to 70MHz.

The fully matched GaN HEMT transistors complement two previously released packaged MMICs, designated the CMPA5585025F and CMPA801B025F, which can also be used as drivers for the CGHV96050 or CGHV96100.

Visit Cree at the 2012 International Microwave Symposium, Booth #2125, to learn more about our new X-Band GaN HEMT transistors. For additional information about the latest X-Band GaN devices, please visit

About Cree
Cree is a market-leading innovator of semiconductor products for power and radio-frequency (RF) applications, lighting-class LEDs and LED lighting solutions.

Cree’s product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and RF devices. Cree products are driving improvements in applications such as general illumination, electronic signs and signals, power supplies and solar inverters.

For additional product and company information, please refer to

This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including customer acceptance of products; the risk that we may be unable to manufacture these new products with sufficiently low cost to offer them at competitive prices or with acceptable margins; the risk we may encounter delays or other difficulties in ramping up production of our new products; the rapid development of new technology and competing products that may impair demand or render Cree’s products obsolete; and other factors discussed in Cree’s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 26, 2011, and subsequent filings.

Cree® is a registered trademark of Cree, Inc.

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