DURHAM, N.C. -- Cree, Inc. (Nasdaq: CREE) will showcase its latest packaged GaN HEMT power transistors and high power amplifier (HPA) MMIC in the 2.7-3.5 GHz range (S-Band) at the 2011 IEEE International Microwave Symposium held June 7-9 in Baltimore. These products offer the industry’s best-known combination of power and efficiency, achieving typical power-added efficiencies (PAEs) of 60%. This results in a reduction in power consumption of up to 20% over existing solutions.
“Cree is pleased to offer these industry-leading, S-Band GaN HEMT devices for a variety of civilian and military applications, such as air-traffic control, weather radar, and homeland defense. Thermal management is a key consideration for radar systems, and Cree GaN HEMT products are enabling ultra-high-efficiency solutions, which result in lower dissipated power, simplified power distribution, smaller device footprints and lighter-weight systems,” said Jim Milligan, Cree, director of RF.
The S-Band transistors, CGH31240F and CGH35240F, are fully internally matched to 50 ohms (Ω) and provide saturated RF output power of 240 watts over 2.7 to 3.1 GHz and 3.1 to 3.5 GHz, respectively, with power gains of greater than 11dB in small package footprints (0.9” x 0.68”) with typical power added efficiencies of 60%. The devices also demonstrate impressive pulse droop of less than 0.2dB at specified operating conditions, owing to the combination of high efficiency and the superior thermal properties of GaN on SiC when compared to other technologies such as GaAs and Si.
The CMPA2735075F is a two-stage GaN HEMT high power MMIC amplifier providing a saturated RF output power of 75 watts over 2.7 to 3.5 GHz with a power gain of 20dB in a small package footprint (0.5” x 0.5”). This is the first and only S-Band GaN HEMT MMIC HPA on the market which offers 60% typical PAE with RF pulse widths of 300 microseconds and a 20% duty cycle.
The CGH31240F, CGH35240F and CMPA2735075F are available now. For additional product information, visit www.cree.com/rf.
Cree is a market-leading innovator of semiconductor solutions for wireless and power applications, lighting-class LEDs, and LED lighting solutions.
Cree’s product families include power-switching devices and radio-frequency/wireless devices, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, and LED fixtures and bulbs. Cree solutions are driving improvements in applications such as variable-speed motors, wireless communications, general illumination, backlighting, and electronic signs and signals.
For additional product and company information, please refer to www.cree.com.
This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including the risk we may encounter delays or other difficulties in ramping up production of our new products; the risk we may be unable to manufacture our new products with sufficiently low cost to offer them at competitive prices or with acceptable margins; the possibility that actual efficiency may vary from expectations; the potential lack of customer acceptance of the products; the rapid development of new technology and competing products that may impair demand or render Cree’s products obsolete; and other factors discussed in Cree’s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 27, 2010, and subsequent filings.