Cree | Wolfspeed Enables High Performance RF Power Solutions with Release of Advanced X-Band Radar Devices
Availability of four new GaN on SiC MMIC devices enable designers to improve RF system size, weight, and power
DURHAM, N.C. – Cree | Wolfspeed, the global leader in silicon carbide (SiC) technology, introduces four new multi-stage GaN on SiC monolithic microwave integrated circuit (MMIC) devices, extending its range of RF solutions for a diverse array of pulsed and continuous wave X-band phased array applications, including marine, weather surveillance and emerging unmanned aerial system radars. Using Wolfspeed® GaN on SiC technology, these new devices deliver high power-added efficiency (PAE) in small, industry standard packages that allow designers to achieve maximum performance with smaller systems that consume less power.
“Cree | Wolfspeed’s new X-band offerings provide today’s design engineers with a wide breadth of options for systems requiring high efficiency transmit solutions in challenging form factors such as those needed for active phased array radar applications,” said Jim Milligan, senior director foundry, aerospace and defense at Cree | Wolfspeed. “Using Wolfspeed® GaN on SiC solutions enables them to meet the critical RF system requirements related to smaller size, lighter weight, and higher power (SWaP) while reaching new levels of performance.”
The extensive X-band portfolio offers solutions that support multiple stages of gain, thereby reducing the number of devices needed in a transmit chain. They come in a variety of power levels to optimize system performance and are offered in multiple platforms to optimize system architecture. See Table 1 for more product details and performance data.
The new amplifiers join an ever-expanding portfolio of solutions for defense applications. Their capabilities showcase Cree | Wolfspeed’s decades of GaN on SiC expertise in supporting the aerospace and defense market while demonstrating its commitment to developing innovative, industry-leading GaN solutions for a broad set of RF applications.
Table 1
Table 1
Table 1
Product SKU | Frequency Min | Frequency Max | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|
CMPA801B030S | 7.9 GHz | 11 GHz | 27 dB | 40% | 28 V | Plastic |
CMPA801B030F1 | 8 GHz | 12 GHz | 19 dB | 36% | 28 V | Flange |
CMPA9396025S | 9 GHz | 10 GHz | 27 dB | 45% | 40 V | Plastic |
CMPA901A020S | 9 GHz | 10 GHz | 30 dB | 45% | 28 V | Plastic |
To learn more about Cree | Wolfspeed and its products, please visit www.wolfspeed.com/products/rf/xband.
About Cree, Inc:
For more than 30 years, the company has served as the global leader in silicon carbide technology and production, leading the worldwide transition from silicon to silicon carbide. Customers leverage the Wolfspeed® product portfolio for disruptive technology solutions that support a more efficient, sustainable future including electric vehicles, fast charging, 5G, power supplies, renewable energy and storage, as well as aerospace and defense. Our people are dedicated to driving a significant shift in the technology sector and creating a global semiconductor powerhouse. For additional product and Company information, please refer to www.cree.com.
Cree® and Wolfspeed® are registered trademarks of Cree, Inc.
Media Contact:
Claire Simmons
Cree, Inc.
csimmons@cree.com
919-407-7844