DURHAM, N.C. -- For the third consecutive year, an amplifier using the Cree, Inc. (Nasdaq: CREE) CGH40010 GaN HEMT transistor won the best power amplifier competition at the 2009 IEEE/MTT-S International Microwave Symposium. David Yu-Ting Wu, representing the University of Waterloo, received the award for best performance amplifier designed and demonstrated as judged on efficiency, power and frequency of operation.
Wu’s Inverse Class-F amplifier was designed using Cree’s proprietary non-linear GaN HEMT model. The accuracy of the model in precisely predicting the required impedance conditions for high-efficiency operation was instrumental in achieving first-pass design success. The winning 3.27 GHz amplifier produced 7.1 watts of RF output power at a power added efficiency (PAE) of 71%.
The second- and third-place student teams also used the CGH40010 in Inverse Class-F circuit architectures. They were, respectively, Paul Saad, Hossein Mashad Nemati and Mattias Thorsell from Chalmers University of Technology, Sweden, and Junghwan Moon and Jungjoon Kim from Pohang University of Science and Technology (POSTECH), Korea.
“This is a hat trick, of sorts, for Cree,” said Jim Milligan, Cree director of RF and Microwave products. “It’s exciting for us to see the next generation of engineers creating innovative designs based on our industry-leading technology. Cree congratulates the students for their efforts and wishes them continued success.”
Cree is a market-leading innovator of semiconductor solutions for wireless and power applications, lighting-class LEDs, and LED lighting solutions.
Cree’s product families include power-switching devices and radio-frequency/wireless devices, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, and LED fixtures and bulbs. Cree solutions are driving improvements in applications such as variable-speed motors, wireless communications, general illumination, backlighting and electronic signs and signals.