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Blocking Voltage 1700 V
Current Rating at 25°C 72 A
Rds(on) at 25°C 45 mΩ
Package Bare Die
Total Switching Energy Loss 3 mJ
Gate charge total 188 nC
Maximum junction temperature 150 °C

Silicon Carbide Power MOSFET
C2M Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: CPM2-1700-0045B


Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems.

See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Download our LTspice or PLECS models or try our SpeedFit design simulator.

Features

  • 1700V of blocking voltage with low RDS(on)
  • High-speed switching with low capacitances
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)

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