| Document Name | Date Updated | Download |
|---|---|---|
| CPM2-1700-0045B | Feb 1, 2016 |
CPM2-1700-0045B
| Blocking Voltage | 1700 V | |
|---|---|---|
| Current Rating at 25°C | 72 A | |
| Rds(on) at 25°C | 45 mΩ | |
| Package | Bare Die | |
| Total Switching Energy Loss | 3 mJ | |
| Gate charge total | 188 nC | |
| Maximum junction temperature | 150 °C | |
Silicon Carbide Power MOSFET
C2M Planar MOSFET Technology
N-Channel Enhancement Mode
SKU: CPM2-1700-0045B
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems.
See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Download our LTspice or PLECS models or try our SpeedFit design simulator.
Features
- 1700V of blocking voltage with low RDS(on)
- High-speed switching with low capacitances
- Avalanche ruggedness
- Fast intrinsic diode with low reverse recovery (Qrr)
Documents
Data Sheets
Design Files
Power Application Notes
| Document Name | Date Updated | Download |
|---|---|---|
| Performance Evaluations of Hard Switching Interleaved DC/DC Boost Converter with New Generation Silicon Carbide MOSFETs | Apr 8, 2019 | |
|
SiC MOSFET Double Pulse Fixture
[Design only; boards no longer available]
Gate Driver Board for 3rd generation MOSFETs. https://www.wolfspeed.com/power/products/gate-driver-boards/cgd15sg00d2 |
May 17, 2019 | |
| SiC MOSFET Isolated Gate Driver | Apr 8, 2019 |