Wolfspeed is driving innovation with the industry’s broadest range of SiC and GaN materials at ECSCRM 2018.
Join us in Booth A10 to see our expanded assortment and talk with our team about using Wolfspeed Materials as the foundation for your designs.
Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutionsby Edward Van Brunt of Wolfspeed, A Cree Company
Date: Tuesday, September 4
Time: 11:00am - 12:30pm
Location: Hall 1
Edward Van Brunt joined Cree in 2013 as a Research Scientist. He received his BSEE degree from the University of Texas at Austin in 2007, and received his MS and Ph.D. in electrical engineering from North Carolina State University in 2009 and 2012, respectively. He has authored or co-authored more than 55 papers, and holds 8 US patents. Edward’s research interests include high voltage SiC device development and processing, as well as defect analysis in 4H-SiC wafers.
Session: TU.02a Power MOSFET
Pack the Pub with Wolfspeed
195-196 Broad Street
Tuesday, September 4th
7:30pm – 12:30am
The lager will be flowing at Wolfspeed’s Industry Party at The Bierkeller. We’ll have plenty of fish and chips, curries and British sweets to eat along with an open bar, a live band and a trivia contest, so join us for a jolly good time.