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High Power RF GaN on SiC HEMT; 460 W; 48 V; 1805 – 1880 MHz

The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermallyenhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
Package Type
GaN on SiC
1.805 GHz
1.88 GHz
460 W
15.5 dB
48 V
  • GaN on SiC HEMT technology
  • Input matched
  • Asymmetric Doherty design
    • Main: P3dB = 170 W Typ
    • Peak: P3dB = 350 W Typ
  • Typical pulsed CW performance: 16 μs pulse width; 10% duty cycle; 2140 MHz; 48 V; Doherty fixture
    • Gain = 15 dB @ 49 dBm
    • Efficiency = 60% @ 49 dBm
    • Output power at P3dB = 490 W
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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