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GTRA184602FC-V1

High Power RF GaN on SiC HEMT; 460 W; 48 V; 1805 – 1880 MHz

The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermallyenhanced package with earless flange.

GTRA184602FC-V1

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA184602FC-V1
Yes
GaN on SiC
1.805 GHz
1.88 GHz
460 W
15.5 dB
60%
48 V
Earless
Features
  • GaN on SiC HEMT technology
  • Input matched
  • Asymmetric Doherty design
    • Main: P3dB = 170 W Typ
    • Peak: P3dB = 350 W Typ
  • Typical pulsed CW performance: 16 μs pulse width; 10% duty cycle; 2140 MHz; 48 V; Doherty fixture
    • Gain = 15 dB @ 49 dBm
    • Efficiency = 60% @ 49 dBm
    • Output power at P3dB = 490 W

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