GTRA184602FC V1


High Power RF GaN on SiC HEMT; 460 W; 48 V; 1805 – 1880 MHz

The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermallyenhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
Package Type
GaN on SiC
1.805 GHz
1.88 GHz
460 W
15.5 dB
48 V
  • GaN on SiC HEMT technology
  • Input matched
  • Asymmetric Doherty design
    • Main: P3dB = 170 W Typ
    • Peak: P3dB = 350 W Typ
  • Typical pulsed CW performance: 16 μs pulse width; 10% duty cycle; 2140 MHz; 48 V; Doherty fixture
    • Gain = 15 dB @ 49 dBm
    • Efficiency = 60% @ 49 dBm
    • Output power at P3dB = 490 W
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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