GTRA263902FC V2


High Power RF GaN on SiC HEMT 370 W; 48 V; 2495 – 2690 MHz

The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
Package Type
GaN on SiC
2.495 GHz
2.69 GHz
370 W
13.8 dB
48 V
  • Input matched
  • Typical pulsed CW performance: 2690 MHz; 48 V; combined outputs
  • Output power at P3dB 370 W
  • Efficiency 70%
  • Gain 15 dB
  • Capable of handling 10:1 VSWR @48 V; 56 W (CW) output power
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Multi-standard Cellular Power Amplifiers
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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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