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GTRA263902FC-V2

High Power RF GaN on SiC HEMT 370 W; 48 V; 2495 – 2690 MHz

The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA263902FC-V2
Yes
GaN on SiC
2.495 GHz
2.69 GHz
370 W
13.8 dB
54%
48 V
Earless
Features
  • Input matched
  • Typical pulsed CW performance: 2690 MHz; 48 V; combined outputs
  • Output power at P3dB 370 W
  • Efficiency 70%
  • Gain 15 dB
  • Capable of handling 10:1 VSWR @48 V; 56 W (CW) output power
  • Low thermal resistance
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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