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GTRA360502M V1

GTRA360502M-V1

gtra360502m
High Power RF GaN on SiC HEMT 50 W; 48 V; 3400 – 3800 MHz

The GTRA360502M is a 50-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally enhanced; overmold package.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA360502M-V1
New
Yes
GaN on SiC
3.4 GHz
3.8 GHz
50 W
15 dB
55%
48 V
Surface Mount
Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA360502M-V1
New
Yes
GaN on SiC
3.4 GHz
3.8 GHz
50 W
15 dB
55%
48 V
Surface Mount
Features
  • GaN on SiC HEMT technology
  • Asymmetric Doherty design
    • Main: P1dB = 20 W Typ
    • Peak: P1dB = 37 W Typ
  • Typical pulsed CW performance; 3500 MHz; 48 V
    • Output power at P3dB = 50 W
    • Gain = 15 dB
    • Efficiency = 55%
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