Features
- GaN on SiC HEMT technology
- Asymmetric Doherty design
- Main: P1dB = 20 W Typ
- Peak: P1dB = 37 W Typ
- Typical pulsed CW performance; 3500 MHz; 48 V
- Output power at P3dB = 50 W
- Gain = 15 dB
- Efficiency = 55%
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
---|---|---|---|---|---|---|---|---|---|---|---|
GTRA360502M-V1 | Discontinued | GaN on SiC | 3.4 GHz | 3.8 GHz | 50 W | 15 dB | 55% | 48 V | Surface Mount |
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