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Product shot of Wolfspeed's RF earless flange H-37248C-4 package.
High Power RF GaN on SiC HEMT 200 W; 48 V; 3400 – 3600 MHz
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The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.



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Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
Package Type
GaN on SiC
3.3 GHz
3.9 GHz
200 W
13.5 dB
48 V
  • Input matched
  • Asymmetrical Doherty design: Main P3dB 85 W Typ; Peak P3dB 115 W Typ
  • Typical Pulsed CW performance; 3500 MHz; 48 V; combined outputs
  • Output power at P3dB 200 W
  • Efficiency 60%
  • Gain 12.5 dB
  • Capable of handling 10:1 VSWR @50 V; 30 W (CW) output power
  • Low thermal resistance
  • Pb-free and RoHS complian
  • Multi-standard Cellular Power Amplifiers

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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

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A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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