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Peak Output Power 280W (P3dB)
Application Telecom
Typical Power (Average) 44 W
Power Gain 14 dB
Operating Voltage 48 V
Frequency 3.3 - 3.9 GHz
Package Type Earless Flange
Efficiency 48%
Technology GaN

High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz

SKU: GTRA362802FC-V1


The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical Pulsed CW performance, 3600 MHz, 48 V, combined outputs
    • Output power at P3dB = 280 W
    • Efficiency = 55%
    • Gain = 11 dB
    • Pulse type CW, 10 μs pulse width, 10% duty cycle
  • Pb-free and RoHS-compliant

Documents