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GTRA362802FC-V1

High Power RF GaN on SiC HEMT 280 W; 48 V; 3400 – 3600 MHz
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The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

GTRA362802FC-V1

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA362802FC-V1
Yes
GaN on SiC
3.3 GHz
3.9 GHz
280 W
13.5 dB
46%
48 V
Earless
Features
  • Input matched
  • Asymmetrical Doherty design: Main P3dB 120 W Typ; Peak P3dB 180 W Typ
  • Typical Pulsed CW performance; 3400-3600 MHz; 48 V; combined outputs
  • Output power at P3dB 280 W
  • Efficiency 60%
  • Gain 15 dB
  • Capable of handling 10:1 VSWR @48 V; 44 W (WCDMA) output power
  • Low thermal resistance
  • Pb-free and RoHS complian
Applications
  • Multi-standard Cellular Power Amplifiers

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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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