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Peak Output Power 400W (P3dB)
Application Telecom
Typical Power (Average) 47.7 W
Power Gain 13 dB
Operating Voltage 48 V
Frequency 3.3 - 3.9 GHz
Package Type Earless
Efficiency 43%
Technology GaN

High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz

SKU: GTRA364002FC-V1


The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Features

  • GaN on SiC HEMT technology
  • Input Matched
  • Typical Pulsed CW performance, 3600 MHz, 48 V, combined outputs
    • PSAT = 400 W
    • Efficiency = 50%
    • Gain = 11 dB
  • Pb-free and RoHS-compliant

Documents