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GTRA364002FC V1

GTRA364002FC-V1

High Power RF GaN on SiC HEMT 400 W; 48 V; 3400 – 3600 MHz

The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA364002FC-V1
Yes
GaN on SiC
3.3 GHz
3.9 GHz
400 W
13 dB
40%
48 V
Earless
Features
  • Input matched
  • Asymmetrical Doherty design: Main P3dB 170 W Typ; Peak P3dB 230 W Typ
  • Typical Pulsed CW performance; 3400-3600 MHz; 48 V; combined outputs
  • Output power at P3dB 400 W
  • Efficiency 60%
  • Gain 14 dB
  • Capable of handling 10:1 VSWR @48 V; 50 W (WCDMA) output power
  • Low thermal resistance
  • Pb-free and RoHS complian
Applications
  • Multi-standard Cellular Power Amplifiers
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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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