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High Power RF GaN on SiC HEMT 400 W; 48 V; 3400 – 3600 MHz

The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
Package Type
GaN on SiC
3.3 GHz
3.9 GHz
400 W
13 dB
48 V
  • Input matched
  • Asymmetrical Doherty design: Main P3dB 170 W Typ; Peak P3dB 230 W Typ
  • Typical Pulsed CW performance; 3400-3600 MHz; 48 V; combined outputs
  • Output power at P3dB 400 W
  • Efficiency 60%
  • Gain 14 dB
  • Capable of handling 10:1 VSWR @48 V; 50 W (WCDMA) output power
  • Low thermal resistance
  • Pb-free and RoHS complian
  • Multi-standard Cellular Power Amplifiers
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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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