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GTRB097152FC-V1

Product shot of Wolfspeed's RF earless flange H-37248C-4 package.
High Power RF GaN on SiC HEMT 900 W, 48 V, 758 – 960 MHz

The GTRB097152FC is a 900-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

GTRB097152FC-V1

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB097152FC-V1
New
Yes
GaN on SiC
0.758 GHz
0.96 GHz
450 W
18 dB
59%
48 V
Earless
Features

Typical Pulsed CW performance, 960 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs

  • Output power at P4dB = 900 W
  • Efficiency at P4dB = 73%

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