Features
- Typical Pulsed CW performance, 2020 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
- Output power at P3dB = 350 W
- Efficiency at P3dB = 65%
- Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS compliant
GTRB204402FC/1-V1
High Power RF GaN on SiC HEMT 350 W, 48 V, 1930 – 2020 MHz
The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Products
GTRB204402FC/1-V1
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GTRB204402FC/1-V1
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
GTRB204402FC/1-V1 | Yes | GaN on SiC | 1.93 GHz | 2.02 GHz | 350 W | 16.3 dB | 58% | 48 V | Earless |
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Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
Resolving mMIMO PA Design Challenges
Massive multiple-input-multiple output (mMIMO) system designers are being challenged to improve system efficiency. Balancing wideband linearity with efficiency is a requirement to fit the size, weight, and power requirements of mMIMO systems. View the whitepaper from Wolfspeed and Analog Devices.