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GTRB204402FC/1-V1

Product shot of Wolfspeed's RF earless flange H-37248C-4 package.
High Power RF GaN on SiC HEMT 350 W, 48 V, 1930 – 2020 MHz

The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

GTRB204402FC/1-V1

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB204402FC/1-V1
Yes
GaN on SiC
1.93 GHz
2.02 GHz
350 W
16.3 dB
58%
48 V
Earless
Features
  • Typical Pulsed CW performance, 2020 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
    • Output power at P3dB = 350 W
    • Efficiency at P3dB = 65%
  • Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
  • Pb-free and RoHS compliant
Applications
  • Communications Infrastructure

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