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GTRB224402FC V1

GTRB224402FC-V1

h-37248c-4_7
High Power RF GaN on SiC HEMT 400 W, 48 V, 2110 – 2200 MHz

The GTRB224402FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB224402FC-V1
New
Yes
GaN on SiC
2.11 GHz
2.2 GHz
400 W
15.5 dB
55%
48 V
Surface Mount
Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB224402FC-V1
New
Yes
GaN on SiC
2.11 GHz
2.2 GHz
400 W
15.5 dB
55%
48 V
Surface Mount
Features
  • GaN on SiC HEMT technology
  • Typical Pulsed CW performance, 2200 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
    • Output power at P3dB = 400 W
    • Efficiency at P3dB = 65%
  • Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
  • Pb-free and RoHS compliant
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