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GTRB226002FC V1

GTRB226002FC-V1

h-37248c-4_1
High Power RF GaN on SiC HEMT 450 W, 48 V, 2110 – 2200 MHz

The GTRB226002FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB226002FC-V1
New
Yes
GaN on SiC
2.11 GHz
2.2 GHz
450 W
15 dB
60%
48 V
Surface Mount
Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB226002FC-V1
New
Yes
GaN on SiC
2.11 GHz
2.2 GHz
450 W
15 dB
60%
48 V
Surface Mount
Features
  • GaN on SiC HEMT technology
  • Typical pulsed CW performance: 10 μs pulse width, 10% duty cycle, 2200 MHz, 48 V, Doherty fixture
    • Efficiency = 65%
    • Gain = 14 dB
    • Output power at P3dB = 450 W
  • Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
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