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GTRB266908FC-V1

Product shot of Wolfspeed's RF earless flange H-37248KC-6 package.
High Power RF GaN on SiC HEMT 500 W, 48 V, 2515 – 2675 MHz

The GTRB266908FC is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB266908FC-V1
New
Yes
GaN on SiC
2.515 GHz
2.675 GHz
500 W
15 dB
52%
48 V
Earless
Features
  • GaN on SiC HEMT technology
  • Typical Pulsed CW performance, 2675 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
    • Output power at P3dB = 549 W
    • Efficiency at P3dB = 69.2%
  • Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
    Pb-free and RoHS compliant
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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