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GTRB266908FC-V1

Product shot of Wolfspeed's RF earless flange H-37248KC-6 package.
High Power RF GaN on SiC HEMT 500 W, 48 V, 2515 – 2675 MHz

The GTRB266908FC is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

GTRB266908FC-V1

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB266908FC-V1
Yes
GaN on SiC
2.515 GHz
2.675 GHz
500 W
15 dB
52%
48 V
Earless
Features
  • GaN on SiC HEMT technology
  • Typical Pulsed CW performance, 2675 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
    • Output power at P3dB = 549 W
    • Efficiency at P3dB = 69.2%
  • Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
    Pb-free and RoHS compliant

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