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GTRB384608FC-V1

H-37248KC-6-2 package type with Wolfspeed logo
High Power RF GaN on SiC HEMT 440 W, 48 V, 3300 – 3800 MHz

Preliminary Information:
The GTRB384608FC is a 440-watt (P3dB), GaN on SiC high electron mobility transistor (HEMT) designed for use in frequency band n78 cellular amplifiers applications.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
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GTRB384608FC-V1
New
Yes
GaN on SiC
3.3 GHz
3.8 GHz
440 W
12.3 dB
41 %
48 V
Earless
Features
  • GaN on SiC HEMT Technology
  • Asymmetric Doherty Design
    • Pout(avg): 47.5 dBm
    • Pout(3dB): 56.4 dBm
  • Pb-free and RoHS compliant
Applications
  • n78 cellular transmitters amplifiers
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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