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GTRB384608FC V1

GTRB384608FC-V1

H-37248KC-6-2 package type with Wolfspeed logo
High Power RF GaN on SiC HEMT 440 W, 48 V, 3300 – 3800 MHz

Preliminary Information:
The GTRB384608FC is a 440-watt (P3dB), GaN on SiC high electron mobility transistor (HEMT) designed for use in frequency band n78 cellular amplifiers applications.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
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GTRB384608FC-V1
New
Yes
GaN on SiC
3.3 GHz
3.8 GHz
440 W
12.3 dB
41 %
48 V
Earless
Features
  • GaN on SiC HEMT Technology
  • Asymmetric Doherty Design
    • Pout(avg): 47.5 dBm
    • Pout(3dB): 56.4 dBm
  • Pb-free and RoHS compliant
Applications
  • n78 cellular transmitters amplifiers
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Resolving mMIMO PA Design Challenges

Massive multiple-input-multiple output (mMIMO) system designers are being challenged to improve system efficiency. Balancing wideband linearity with efficiency is a requirement to fit the size, weight, and power requirements of mMIMO systems. View the whitepaper from Wolfspeed and Analog Devices.
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 White Paper

RF Power Amplification 101: Amplifier Classes

The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
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